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US 2026/0095140 A1Published application
Resonator with spur mitigation device
OwnerBichoy BAHR, Kashyap MOHAN +3inventors
InventorsBichoy BAHR, Kashyap MOHAN, Yujing ZHANG, Baher S. HAROUN, Michael T. WYANT
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Abstract
An apparatus includes a semiconductor substrate, a bulk acoustic wave (BAW) resonator, and a coating or protrusion structures. The BAW resonator is on a first side of the semiconductor substrate. The coating and/or the protrusion structures are on a second side of the semiconductor substrate. The coating has a lower Young's modulus than the semiconductor substrate. The protrusion structures have uniform dimensions.
Claims25
An apparatus comprising:
- a semiconductor substrate;
- a bulk acoustic wave (BAW) resonator on a first side of the semiconductor substrate;
- and
- a coating on a second side of the semiconductor substrate, the coating having a lower Young's modulus than the semiconductor substrate.
1 more element
An apparatus comprising:
- a semiconductor substrate;
- a bulk acoustic wave (BAW) resonator on a first side of the semiconductor substrate;
- and
- protrusion structures having uniform dimensions on a second side of the semiconductor substrate.
1 more element
An apparatus comprising:
- a semiconductor substrate having a thickness of no more than 100 micro-meters;
- a bulk acoustic wave (BAW) resonator on a first side of the semiconductor substrate;
- and
- a spur mitigation device on a second side of the semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.