Non-volatile memory device, storage device including the same, and operating method thereof

A non-volatile memory device comprising:

• a voltage generator;
• a control logic circuit;
• an adjacent word line comprising first adjacent memory cells and second adjacent memory cells;
• and
• a selected word line comprising first selected memory cells adjacent to the first adjacent memory cells and second selected memory cells adjacent to the second adjacent memory cells,
• wherein the control logic circuit is configured to:
• control the voltage generator to apply at least one group determination read voltage to the adjacent word line and classify each of the adjacent memory cells into one of aggressor cell groups;
• control the voltage generator, in response to receiving a command instructing a data recovery read operation for the selected word line, to apply first sub-read voltages for distinguishing first sub-states of the first selected memory cells to selected memory cells and to perform a first read operation;
• and
• control the voltage generator, in response to receiving the command, to apply second sub-read voltages for distinguishing second sub-states of the second selected memory cells to the selected memory cells and to perform a second read operation,
• wherein, based on the first adjacent memory cells being classified as a first aggressor cell group of the aggressor cell groups, the first sub-read voltages are determined based on (i) at least one of threshold voltage distributions associated with states of the selected memory cells and (ii) a first coupling pattern by the first aggressor cell group, and
• wherein, based on the second adjacent memory cells being classified as a second aggressor cell group of the aggressor cell groups, the second sub-read voltages are determined based on (i) at least one of the threshold voltage distributions and (ii) a second coupling pattern by the second aggressor cell group.

An operating method of a storage device comprising a storage controller and a non-volatile memory device, the method comprising:

• transmitting, by the storage controller, to the non-volatile memory device, a command instructing a data recovery read operation for a selected word line to which selected memory cells are connected, the selected memory cells comprising one or more selected memory cells adjacent to one or more adjacent memory cells included in an adjacent word line;
• applying, by the non-volatile memory device, at least one group determination read voltage to the adjacent word line and classifying each of the adjacent memory cells into any one of aggressor cell groups;
• determining, by the storage device, a sub-read voltage set for distinguishing sub-states of the one or more selected memory cells;
• and
• in response to receiving the command, generating, by the non-volatile memory device, read data for the selected word line based on a read voltage set comprising the determined sub-read voltage set and transmitting the read data to the storage controller, wherein,
• based on the one or more adjacent memory cells being classified into a specific aggressor cell group of the aggressor cell groups, the sub-read voltage set is determined based on a coupling pattern by the specific aggressor cell group, and at least one of threshold voltage distributions associated with states of the selected memory cells.