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US 2026/0094650 A1Published application
Memory system and operation method thereof, and readable storage medium
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsTeng ZHOU, Qian SUN, Xiaodong XU, Wen LUO, Yuzhe CHI
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Abstract
A memory system includes: a memory device including a plurality of memory blocks, each of which including a plurality of word lines and a plurality of memory cells coupled to the plurality of word lines; a memory controller coupled to the memory device and configured to: acquire a read retry voltage with both a first-type read retry table and a second-type read retry table; control the memory device to perform a read retry operation with the read retry voltage.
Claims20
A memory system, comprising:
- a memory device, comprising:
- a memory block, comprising:
- word lines;
- and
- memory cells coupled to the word lines;
- and
- a memory controller, coupled to the memory device and configured to:
- obtain a read voltage based on a first voltage offset table and a second voltage offset table, wherein:
- the first voltage offset table includes voltage offset values corresponding to different situations when the memory block is closed;
- and
- the second voltage offset table includes voltage offset values corresponding to the word lines with different locations when the memory block is open, based on the first voltage offset table;
- and
- control the memory device to perform a read operation with the read voltage.
10 more elements
A method of operating a memory system, comprising:
- obtaining a read voltage based on a first voltage offset table and a second voltage offset table, wherein:
- the first voltage offset table includes voltage offset values corresponding to different situations when a memory block of a memory device is closed;
- and
- the second voltage offset table includes voltage offset values corresponding to word lines with different positions when the memory block is open, based on the first voltage offset table;
- and
- performing a read operation with the read voltage.
3 more elements
A memory system, comprising:
- a memory device, comprising:
- a memory block, comprising:
- word lines;
- and
- memory cells coupled to the word lines;
- and
- a memory controller, coupled to the memory device and configured to:
- obtain a read voltage for performing a read operation on a memory cell to be read in an open memory block, based on a first voltage offset value corresponding to one situation when the memory block is closed and a second voltage offset value corresponding to a location of a word line that the memory cell to be read is coupled to;
- and
- control the memory device to perform the read operation with the read voltage.
7 more elements
Dependencies are inferred from the claim text.