Memory device and driving method of sensing device included in memory device

A memory device comprising:

• a first memory cell connected to a first bit line and configured to store first data;
• a first transistor including a first terminal connected to the first bit line, the first transistor being configured to transfer a first data signal representing the stored first data to a second terminal;
• a bit line sense amplifier connected to the first transistor, the bit line sense amplifier being configured to amplify the first data signal to output a first amplified signal to an output node through a precharge transistor;
• and
• a local transistor including a first local terminal connected to the output node of the bit line sense amplifier, and a second local terminal connected to a local sense amplifier, the local sense amplifier being configured to amplify the first amplified signal to output a second amplified signal;
• and
• a control logic circuit configured to control transfer of the first amplified signal to the local sense amplifier by controlling the local transistor to be in an on state and controlling the precharge transistor to be in an off state.

A method for driving a memory device which comprises a first memory cell connected to a first bit line and stores data, a first transistor connected to the first bit line, a bit line sense amplifier connected to the first transistor and comprising a precharge transistor, and a local transistor connected to the bit line sense amplifier and a local sense amplifier, the method comprising:

• providing a first data signal based on the stored data to the bit line sense amplifier when the first transistor is turned on;
• amplifying the first data signal by the bit line sense amplifier to obtain a first amplified signal;
• providing the first amplified signal to an output node of the bit line sense amplifier when the precharge transistor is turned on;
• and
• providing an output of the bit line sense amplifier to the local sense amplifier when the local transistor is has an on state and the precharge transistor has an off state to provide the first amplified signal from the output node of the bit line sense amplifier to the local sense amplifier.