Mirror layer and mirror for a lithographic apparatus
AssigneeASML Netherlands B.V.
InventorsSilvester HOUWELING, Inci DONMEZ NOYAN
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Abstract
A mirror layer for a lithographic apparatus, the mirror layer including at least one element which forms a chemical bond with silicon having a bond dissociation energy of at least 447 kJ mol−1. Also a method of manufacturing such a mirror layer, a mirror including such a mirror layer, and a lithographic apparatus comprising such a mirror layer or mirror. Also the use of molybdenum silicon sulphide, oxide, selenide, or fluoride in a mirror layer or mirror and the use of such a mirror layer or mirror in a lithographic apparatus or method.
Claims21
A mirror layer for a lithographic apparatus, the mirror layer comprising at least one element which forms a chemical bond with silicon having a bond dissociation energy of at least 447 kJ mol−1 or at least 4.6 eV.
A mirror layer or mirror comprising molybdenum silicon sulphide, oxide, selenide, or fluoride.
(canceled)
Dependencies are inferred from the claim text.