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US 2026/0092869 A1Published application
Electric field enhancement device and raman spectroscopic apparatus
AssigneeSeiko Epson Corporation
InventorsYoshitaka ITO, Fumika YAMADA, Kaho TAKEUCHI
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Abstract
An electric field enhancement device includes a substrate, a plurality of microstructures provided to the substrate and having electrical conductivity, and a silicon oxide layer configured to cover the plurality of microstructures and the substrate, wherein an enhanced electric field generated by the plurality of microstructures is maximized at a position located at an opposite side of the microstructures to the substrate and separated from the plurality of microstructures in a normal direction to the substrate.
Claims16
An electric field enhancement device comprising:
- a substrate;
- a plurality of microstructures provided to the substrate and having electrical conductivity;
- and
- a silicon oxide layer configured to cover the plurality of microstructures and the substrate, wherein an enhanced electric field generated by the plurality of microstructures is maximized at a position located at an opposite side of the microstructures to the substrate and separated from the plurality of microstructures in a normal direction to the substrate.
1 more element
Dependencies are inferred from the claim text.