Back to results
US 2026/0092398 A1Published application
SiC EPITAXIAL WAFER, METHOD FOR MANUFACTURING SiC EPITAXIAL WAFER, AND SiC DEVICE
AssigneeResonac Corporation
InventorAkira MIYASAKA
Life of this patent
Estimating the term…
Abstract
What is provided is a SiC epitaxial wafer and a SiC device having a SiC epitaxial layer in which a carrier lifetime can be estimated and a variation in a density of a Z1/2 center in a depth direction is curbed. The SiC epitaxial wafer includes a substrate and a SiC epitaxial layer formed on a first surface of the substrate, wherein a uniformity of the density of the Z1/2 centers in the depth direction in the SiC epitaxial layer is less than 0.5 (%/μm).
Claims9
A SiC epitaxial wafer comprising:
- a SiC substrate;
- and
- a SiC epitaxial layer formed on a first surface of the SiC substrate,
- wherein a uniformity of a density of a Z1/2 center in a depth direction in the SiC epitaxial layer is less than 0.5 (%/μm).
1 more element
A method for manufacturing a SiC epitaxial wafer, comprising:
- a formation step of forming a SiC epitaxial layer on a first surface of a SiC substrate by a chemical vapor deposition method using a growth apparatus having a gas supply port for supplying a Si-based gas and a C-based gas and a gas discharge port,
- wherein the formation step includes an adjustment step of analyzing a gas discharged from the gas discharge port by quadrupole mass spectrometry, increasing an amount of supply of the C-based gas relative to the Si-based gas when an analyzed C/Si ratio is lower than a target value, and decreasing the amount of supply of the C-based gas relative to the Si-based gas when the analyzed C/Si ratio is higher than the target value.
A SiC device comprising:
- a SiC substrate;
- and
- a SiC epitaxial layer formed on a first surface of the SiC substrate, wherein a uniformity of a Z1/2 center density in a depth direction in the SiC epitaxial layer is less than 0.5 (%/μm).
Dependencies are inferred from the claim text.