Reflectors, chamber arrangements and semiconductor processing systems including reflectors, and methods of depositing material layers onto substrates using chamber arrangements and semiconductor processing systems having reflectors

A material layer deposition method, comprising:

• at a chamber arrangement including a chamber body and a reflector spaced apart from the chamber body;
• the reflector including a reflector body having a first surface bounded in part by a side of the reflector body and defining therein a first surface aperture;
• a second surface also bounded in part by the side of the reflector body and including a reflective material, the second surface separated from the first surface by a thickness of the reflector body, the second surface defining there a second surface aperture, the second surface aperture fluidly coupled to the first surface aperture by a channel extending through the thickness of the reflector body, one of the first surface aperture and the second surface aperture is disposed closer to the side of the reflector than the other of the first surface aperture and the second surface aperture, and the channel angled relative to at least one of the first surface and the second surface,
• seating a substrate within the chamber body;
• heating the substrate using a heater element array disposed between the reflector and the chamber body at least in part using electromagnetic radiation emitted by the heater element array in a direction substantially opposite the substrate and reflected by the second surface of the reflector body;
• contacting the substrate with a material layer precursor such that a material layer deposits onto the substrate;
• and
• issuing a coolant from the second surface aperture at a flow angle oblique relative to the reflector body, whereby the chamber body is locally cooled during deposition of the material layer onto the substrate by the coolant issued from the second surface aperture.