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US 2026/0092365 A1Published application
Activator, and semiconductor substrate and semiconductor device fabricated using the same
OwnerJae Sun JUNG, Seung Hyun LEE +1inventors
InventorsJae Sun JUNG, Seung Hyun LEE, Chang Bong YEON
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Abstract
The present invention relates to an activator, and a semiconductor substrate and semiconductor device fabricated using the same. By using a titanium precursor compound and a specific reaction gas according to a method of manufacturing a titanium-containing deposition film of the present invention, a deposition film with high purity may be easily manufactured by a simple process.
Claims14
An activator comprising an alkyl-free halogenide for changing a ligand of a precursor compound bonded to a group 4 central metal.
Dependencies are inferred from the claim text.