Methods for depositing metal nitride layers on a substrate by cyclical deposition processes including cyclic compounds

A method for thermally depositing a metal nitride layer on a substrate, the method comprising:

• heating the substrate to a deposition temperature between 350° C. and 500° C.;
• and
• repeatedly performing a deposition cycle of an atomic layer deposition process, each deposition cycle comprising:
• (a) initially contacting the substrate with a transition metal precursor;
• after contacting the substrate the transition metal precursor, (b) contacting the substrate with a nitrogen reactant;
• and
• after contacting the substrate with the nitrogen reactant, (c) contacting the substrate with a reducing agent comprising a cyclic diene compound selected from 1,4-cyclohexadiene, 1,3-cyclohexadiene, and 1-methyl-1,4-cyclohexadiene.

A method of forming a semiconductor structure, the method comprising:

• seating a substrate within a reaction chamber, the substrate including a metal oxide layer;
• heating the substrate to a deposition temperature between 350°C. and 500° C.;
• and
• depositing a metal nitride layer over the metal oxide layer by repeatedly performing a deposition cycle of an atomic layer deposition process, each deposition cycle comprising:
• (a) initially contacting the substrate with a metal precursor;
• after contacting the substrate the metal precursor, (b) contacting the substrate with a nitrogen reactant;
• and
• after contacting the substrate with the nitrogen reactant, (c) contacting the substrate with reducing agent comprising a cyclic diene compound selected from 1,4-cyclohexadiene, 1,3-cyclohexadiene, and 1-methyl-1,4-cyclohexadiene.