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US 2026/0092360 A1Published application
Cyclical deposition method including treatment step and apparatus for same
AssigneeASM IP Holding B.V.
InventorsKai Matsuhisa, Satomi Ota, Trigagema Gama, Anhtuan Phan
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Abstract
A method and apparatus for depositing a material on a surface of a substrate are disclosed. The method can include a treatment step to suppress a rate of material deposition on the surface of the substrate. The method can result in higher-quality deposited material. Additionally or alternatively, the method can be used to fill a gap within the surface of the substrate with reduced or no seam formation.
Claims22
A method for filling a gap, the method comprising the steps of:
- providing the substrate with a gap in a reaction chamber;
- forming first active species from a first reactant for forming an inhibition layer in a vicinity of a top of the gap;
- and
- performing one or more deposition cycles to deposit a material into the gap, wherein each deposition cycle comprises:
- introducing a second reactant to the reaction chamber, wherein the second reactant reacts with the surface of the substrate to form a chemisorbed layer in the gap;
- and
- forming a second active species from a third reactant that reacts with the chemisorbed layer to form a deposited layer,
- wherein the second active species is formed providing pulsed plasma power to an electrode for a plasma power period to form a plasma within the reaction chamber,
- wherein the reaction of the second reactant in the vicinity of the top of the gap is at least partially inhibited by the inhibition layer, and
- wherein a ratio of a number of steps of forming first active species and a number of deposition cycles ranges from about 1:1 to about 1:10.
7 more elements
A semiconductor processing apparatus comprising:
- one or more reaction chambers for accommodating a substrate comprising a gap;
- a first source for a first reactant in gas communication via a first valve with one of the reaction chambers;
- a second source for a second reactant in gas communication via a second valve with one of the reaction chambers;
- a third source for a third reactant in gas communication via a third valve with one of the reaction chambers;
- and
- a controller operably connected to the first, second, and third gas valves and configured and programmed to control:
- forming first active species from a first reactant for forming an inhibition layer in a vicinity of a top of the gap;
- and
- performing one or more deposition cycles to deposit a material into the gap, wherein each deposition cycle comprises:
- introducing a second reactant to the reaction chamber, wherein the second reactant reacts with the surface of the substrate to form a chemisorbed layer in the gap;
- and
- forming a second active species from a third reactant that reacts with the chemisorbed layer to form a deposited layer,
- wherein the second active species is formed providing pulsed plasma power to an electrode for a plasma power period to form a plasma within the reaction chamber,
- wherein the reaction of the second reactant in the vicinity of the top of the gap is at least partially inhibited by the inhibition layer, and
- wherein a ratio of a number of steps of forming first active species and a number of deposition cycles ranges from about 1:1 to about 1:10.
12 more elements
Dependencies are inferred from the claim text.