Semiconductor device

A semiconductor device comprising:

• an insulating substrate having an obverse surface and a reverse surface spaced apart from each other in a thickness direction;
• an obverse-surface metal layer disposed on the obverse surface;
• a reverse-surface metal layer disposed on the reverse surface;
• a plurality of semiconductor elements each having an element obverse surface and an element reverse surface spaced apart from each other r in the thickness direction, the plurality of semiconductor elements being electrically connected to each other in parallel;
• a pad portion electrically connected to the plurality of semiconductor elements;
• and
• a first terminal portion electrically connected to the pad portion,
• wherein each of the plurality of semiconductor elements includes:
• an obverse-surface electrode and a control electrode both disposed on the element obverse surface;
• and a reverse-surface electrode disposed on the element reverse surface,
• the pad portion includes a closed region surrounded by three line segments each formed by connecting two of a first vertex, a second vertex, and a third vertex that are not on a same straight line,
• as viewed in the thickness direction, the first vertex overlaps with one of the plurality of semiconductor elements that is located in an outermost position in a first sense of a first direction perpendicular to the thickness direction,
• as viewed in the thickness direction, the second vertex overlaps with one of the plurality of semiconductor elements that is located in an outermost position in a second sense of the first direction,
• as viewed in the thickness direction, the third vertex is located on a perpendicular bisector of the line segment connecting the first vertex and the second vertex, and
• the obverse-surface electrode of each of the plurality of semiconductor elements is electrically connected to the pad portion via a conductive block member.