Semiconductor device

A semiconductor device comprising:

• a substrate comprising a first area extending from an edge toward a center of the substrate and a second area that is an area of the substrate excluding the first area;
• a first substrate pad on the first area and a second substrate pad on the second area;
• a substrate insulation layer surrounding at least a portion of each of the first substrate pad and the second substrate pad;
• a passivation layer on the substrate insulation layer;
• a first bump pad on the passivation layer, electrically connected to the first substrate pad, and including a first solder bump;
• and
• a second bump pad on the passivation layer, electrically connected to the second substrate pad, and including a second solder bump,
• wherein the first bump pad comprises a first connector that is recessed toward the first area, and the second bump pad comprises a second connector that is recessed toward the second area, and
• wherein the first connector, when viewed in a first direction perpendicular to a surface of the substrate, comprises a shape including at least one of,
• a first shape having a first length L1 shorter than a second length L2 and a third length L3,
• the first length L1 being along a first axis direction passing through a center of the first bump pad toward a center of the substrate,
• the second length L2 being along a second axis direction, the second axis direction being rotated 45 degrees counterclockwise from the first axis direction while passing through the center of the first bump pad, and
• the third length L3 being along a third axis direction, the third axis direction being rotated 45 degrees clockwise from the first axis direction while passing through the center of the first bump pad;
• a second shape having the first length L1 shorter than a major axis length LA of the first connector parallel to the second axis direction and a major axis length LB of the first connector parallel to the third axis direction, the second shape being different from the first shape;
• and
• a third shape, in which a sum of a surface area of the first connector in the first area rotated 45 degrees counterclockwise to 135 degrees counterclockwise from the first axis direction and a surface area of the first connector in a third area rotated 45 degrees clockwise to 135 degrees clockwise from the first axis direction is greater than a sum of a surface area of the first connector in the second area rotated 135 degrees counterclockwise to 225 degrees counterclockwise from the first axis direction and a surface area of the first connector in a fourth area rotated 45 degrees clockwise or 45 degrees counterclockwise from the first axis direction, the third shape being different from the first shape and the second shape.

A semiconductor device comprising:

• a substrate comprising a first area extending from an edge toward a center of the substrate and a second area that is an area of the substrate excluding the first area;
• a first substrate pad on the first area and a second substrate pad on the second area;
• a substrate insulation layer surrounding at least a portion of each of the first substrate pad and the second substrate pad;
• a passivation layer on the substrate insulation layer;
• a first bump pad on the passivation layer, electrically connected to the first substrate pad, and including a first solder bump;
• and
• a second bump pad on the passivation layer, electrically connected to the second substrate pad, and including a second solder bump,
• wherein the first bump pad comprises a first connector that is recessed toward the first area, and the second bump pad comprises a second connector that is recessed toward the second area,
• wherein the first connector, when viewed in a first direction perpendicular to a surface of the substrate, comprises a shape including at least one of,
• a first shape having a first length L1 shorter than a second length L2 and a third length L3,
• the first length L1 being along a first axis direction passing through a center of the first bump pad toward a center of the substrate,
• the second length L2 being along a second axis direction, the second axis direction being rotated 45 degrees counterclockwise from the first axis direction while passing through the center of the first bump pad, and
• the third length L3 being along a third axis direction, the third axis direction being rotated 45 degrees clockwise from the first axis direction while passing through the center of the first bump pad;
• a second shape having the first length L1 shorter than a major axis length LA of the first connector parallel to the second axis direction and a major axis length LB of the first connector parallel to the third axis direction, the second shape being different from the first shape;
• and
• a third shape, in which a sum of a surface area of the first connector in the first area rotated 45 degrees counterclockwise to 135 degrees counterclockwise from the first axis direction and a surface area of the first connector in a third area rotated 45 degrees clockwise to 135 degrees clockwise from the first axis direction is greater than a sum of a surface area of the first connector in the second area rotated 135 degrees counterclockwise to 225 degrees counterclockwise from the first axis direction and a surface area of the first connector in a fourth area rotated 45 degrees clockwise or 45 degrees counterclockwise from the first axis direction, the third shape being different from the first shape and the second shape,
• wherein the semiconductor device comprises an arrangement in which at least two first bump pads adjacent to each other among a plurality of first bump pads are parallel to the surface of the substrate, are spaced apart from each other in a second direction which intersects the first direction, and are spaced apart from each other in a third direction that is parallel to the surface of the substrate and intersects with the second direction,
• wherein, with respect to at least two first bump pads adjacent to each other among the plurality of first bump pads, the semiconductor device includes the first connector, the second connector, and a third connector,
• wherein, when viewed from the first direction, the first connector and the second connector are spaced apart from each other in the second direction and the first connector and the third connector are spaced apart from each other in the third direction, and the third connector has a shape that is same as a shape of the first connector and is rotated with respect to the first connector by a rotation angle,
• wherein the rotation angle is less than 90 degrees, and
• wherein, when viewed from the first direction, a surface area of the shape of the first connector is a same as a surface area of a shape of the second connector, or the surface area of the shape of the first connector is larger than the surface area of the shape of the second connector.