Manufacturing method for semiconductor device

The manufacturing method according to claim 1, further comprising a fifth step, after the second step, deforming the bump by applying the fifth load to the semiconductor element to press the bump of the semiconductor element onto the circuit board and by applying ultrasonic vibration with a fourth strength to the bump, wherein

• a maximum value of the fifth load is 40% or more and 120% or less of a maximum value of the first load. 17, The manufacturing method according to claim 16, wherein
• a height of the bump deformed during the fourth is less than 50% of a total height of the bump deformed during the first step, the second step, and the fifth step, and
• a height of the bump deformed during the first is less than 50% of the total height of the bump deformed during the first step, second step, and the fifth step.