Method for manufacturing semiconductor device

Abstract

A method for manufacturing a semiconductor device is provided. The method includes the following steps. First, a first semiconductor structure and a second semiconductor structure are provided. The first semiconductor structure includes a first conductive pillar and a first conduction layer connected to the first conductive pillar, and the second semiconductor structure includes a second conductive pillar and a second conduction layer connected to the second conductive pillar, wherein a material of the first conduction layer and a material of the second conduction layer are conductive material and are volatilizable at a predetermined temperature. Thereafter, the first semiconductor structure and the second semiconductor structure are bonded to combine the first conductive pillar with the second conductive pillar. After the step of bonding the first semiconductor structure and the second semiconductor structure is completed, the first conduction layer and the second conduction layer are disappeared.

Dependencies are inferred from the claim text.