Semiconductor package including heat transfer structure and dam structure

A semiconductor package, comprising:

• an upper redistribution layer;
• a first semiconductor chip on the upper redistribution layer;
• a heat radiator on the upper redistribution layer and horizontally spaced apart from the first semiconductor chip;
• a heat transfer structure between the upper redistribution layer and the heat radiator;
• and
• a dam structure between the upper redistribution layer and the heat radiator,
• wherein the dam structure comprises a protruding portion that extends to a top surface of the upper redistribution layer,
• wherein the heat transfer structure comprises:
• a first heat transfer layer;
• and
• a second heat transfer layer adjacent to the first heat transfer layer, and
• wherein, in plan view, the dam structure is between the first heat transfer layer and the second heat transfer layer.

A semiconductor package, comprising:

• a substrate;
• a first semiconductor chip on the substrate;
• a heat radiator on the substrate and horizontally spaced apart from the first semiconductor chip, the heat radiator comprising a center region and a peripheral region;
• at least one dam structure comprising a first dam structure between the substrate and the first semiconductor chip and, in plan view, overlapping a boundary between the center region and the peripheral region of the heat radiator;
• and
• a first heat transfer layer between the center region of the heat radiator and the substrate and within a perimeter of the first dam structure,
• wherein the first dam structure comprises a metallic material.