Semiconductor die, semiconductor package and manufacturing method of semiconductor die

A semiconductor package, comprising:

• a first semiconductor die;
• and
• a second semiconductor die electrically connected with the first semiconductor die, wherein the second semiconductor die includes:
• a semiconductor substrate;
• an interconnect structure disposed on the first semiconductor substrate;
• a bonding conductor disposed on and electrically connected with the interconnect structure;
• a redistribution layer disposed on the interconnect structure at a lower level than the bonding conductor;
• and
• a capacitor structure laterally surrounding and electrically connected with a sidewall of the bonding conductor.

A method of manufacturing a semiconductor die, comprising:

• forming an interconnect structure on a semiconductor substrate;
• forming a capacitor structure over the interconnect structure;
• forming a redistribution layer over and electrically connected to the interconnect structure;
• and
• forming a bonding conductor vertically penetrating through the capacitor structure to be electrically connected with the capacitor structure at a sidewall of the bonding conductor, wherein the bonding conductor is formed at a higher level than the redistribution layer.