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US 2026/0090366 A1Published application
Semiconductor device and method of forming the same
AssigneeWinbond Electronics Corp.
InventorShou-Te WANG
Life of this patent
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Abstract
A semiconductor device includes: a substrate; a gate structure disposed on the substrate; a first insulating layer covering the gate structure; a contact disposed through the first insulating layer, wherein the contact is laterally adjacent to the gate structure; a metal layer disposed on the first insulating layer and in physical contact with the contact; and a first dielectric layer covering a sidewall of the metal layer.
Claims20
A semiconductor device, comprising:
- a substrate;
- a gate structure disposed on the substrate;
- a first insulating layer covering the gate structure;
- a contact disposed through the first insulating layer, wherein the contact is laterally adjacent to the gate structure;
- a metal layer disposed on the first insulating layer and in physical contact with the contact;
- and
- a first dielectric layer covering a sidewall of the metal layer.
4 more elements
A method of forming a semiconductor device, comprising:
- providing a substrate;
- forming a gate structure on the substrate;
- forming a first insulating layer covering the gate structure;
- forming a second insulating layer on the first insulating layer;
- forming a metal layer on the second insulating layer;
- and
- forming a first dielectric layer covering a sidewall of the metal layer.
4 more elements
Dependencies are inferred from the claim text.