Semiconductor structure with isolation structure and method for manufacturing the same

A method for manufacturing a semiconductor structure, comprising:

• forming a shallow trench isolation structure at a first substrate portion of a semiconductor substrate;
• forming a trench which penetrates the shallow trench isolation structure, and which extends through a second substrate portion of the semiconductor substrate, the second substrate portion being located beneath the first substrate portion;
• forming an isolating material layer on the semiconductor substrate and the shallow trench isolation structure and in the trench;
• forming a protective material layer on the isolating material layer and in the trench;
• removing horizontal portions of the protective material layer to form a protective layer laterally covering the isolating material layer and to expose horizontal portions of the isolating material layer from the protective layer;
• removing the horizontal portions of the isolating material layer to form an isolation layer that laterally covers the semiconductor substrate and the shallow trench isolation structure and that is disposed between the protective layer and the semiconductor substrate;
• and
• forming a conductive material layer to fill the trench.

A semiconductor structure comprising:

• a semiconductor substrate;
• a shallow trench isolation (STI) structure located at a first substrate portion of the semiconductor substrate;
• and
• a deep trench isolation (DTI) structure located in the STI structure and extending through a second substrate portion of the semiconductor substrate which is located beneath the first substrate portion, the DTI structure including a conduction layer and an isolation layer that is disposed to separate the conduction layer from the first substrate portion and the second substrate portion, and that has a cross section of a rectangular shape.