Etch Process and a Processing Assembly
AssigneeASM IP Holding B.V.
InventorsCharles Dezelah, Viljami Pore, Varun Sharma
Life of this patent
Estimating the term…
Abstract
The current disclosure relates to a method of etching etchable material from a semiconductor substrate. The method comprises providing a substrate comprising the etchable material into a reaction chamber and providing a haloalkylamine into the reaction chamber in vapor phase for etching the etchable material. The disclosure further relates to a semiconductor processing assembly, and to a method of cleaning a reaction chamber.
Claims20
A semiconductor processing assembly for etching material from a surface of a substrate, the assembly comprising:
- at least one reaction chamber for etching constructed and arranged to hold a substrate;
- an injector system constructed and arranged to provide a haloalkylamine into the at least one reaction chamber in a vapor phase;
- and
- a first reactant vessel constructed and arranged to contain the haloalkylamine,
- wherein the assembly is constructed and arranged to provide the haloalkylamine via the injector system into the at least one reaction chamber for etching the material from the substrate.
A method of cleaning a reaction chamber of a semiconductor processing assembly, comprising:
- providing a reaction chamber having an inner surface;
- and
- providing a haloalkylamine into the reaction chamber to remove material deposited on the inner surface,
- wherein the haloalkylamine comprises a carbon atom bonded to a nitrogen atom and to at least one halogen atom, or is 2,2,-difluoroethyl-N,N-dimethylamine.
Dependencies are inferred from the claim text.