Substrate processing method, substrate processing device, and method of manufacturing a semiconductor device

A substrate processing device comprising:

• a process chamber forming an internal space;
• a substrate support disposed inside the process chamber to support a substrate;
• a first electrode configured to generate a plasma in the internal space;
• a first electromagnet and a second electromagnet configured to generate a magnetic field in the internal space;
• and
• first and second DC power supply units configured to supply first and second DC pulse signals to the first and second electromagnets, respectively,
• wherein the first DC pulse signal is a signal repeated at a first period to include a first section and a second section subsequent thereto, and the second DC pulse signal is a signal repeated at a second period to include a third section and a fourth section subsequent thereto,
• the first DC pulse signal has a first level during the first section and a second level different therefrom during the second section,
• the second DC pulse signal has a third level during the third section and a fourth level different therefrom during the fourth section, and
• each of the first through fourth sections has a duration of 0.1 to 10 seconds.

A substrate processing device comprising:

• a process chamber forming an internal space;
• a substrate support disposed inside the process chamber;
• a first electrode configured to receive a source power signal to generate a plasma in the internal space;
• a second electrode configured to receive an AC bias power signal;
• an electromagnet configured to generate a magnetic field in the internal space;
• and
• a DC power supply unit configured to supply a first DC pulse signal to the electromagnet,
• wherein the first DC pulse signal is a signal repeated at a first period to include a first section and a second section subsequent thereto,
• the first DC pulse signal has a first level during the first section and a second level different therefrom during the second section, and
• each section has a duration of 0.1 to 10 seconds.