Shadow evaporation on lattice planes for tunnel junctions

A structure comprising:

• a trench located in a substrate, wherein the substrate includes a first flat surface located at the top of the trench and a second flat surface located in the bottom of the trench, wherein the trench includes a plurality of angled sidewalls;
• a first electrode located on the first flat surface of the substrate, along the second flat surface located at the bottom of the trench, and along one of the plurality of angled sidewalls of the trench;
• a tunnel junction located on top of the first electrode located on the second flat surface of the substrate located at the bottom of the trench;
• a second electrode located on top of tunnel junction layer and located on one of the plurality of angled sidewalls of the trench.

A method comprising:

• utilizing an anisotropic etch to form a trench in a substrate;
• utilizing a first angled evaporation process to form a first electrode;
• oxidizing the first electrode to form a tunnel junction;
• and
• utilizing a second angled evaporation process to form a second electrode, wherein the second electrode, the tunnel junction, and the first electrode overlap at the bottom of the trench.