Free layer of magnetic tunnel junction, magnetic memory chip, and method for manufacturing magnetic tunnel junction

Abstract

The present disclosure provides a structure of a free layer of a magnetic tunnel junction (MTJ), the core device of a magnetic random access memory (MRAM) chip, and a method for manufacturing the same. The free layer provided by the present disclosure includes one or more ferromagnetic film layers and a coupling superposition layer sandwiched between all the adjacent ferromagnetic film layers. During information writing, the ferromagnetic films can carry out spin reversal separately to reduce information writing energy; at the same time, because of a coupling effect of the ferromagnetic film layers, the free layer can maintain high thermal stability. Therefore, the contradiction between low information writing energy and high thermal stability, which is the current main contradiction in the large-scale application of MTJ-based MRAMs is overcome.

Dependencies are inferred from the claim text.