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AssigneesYangtze Delta Graduate School of Beijing Institute of Technology (Jiaxing), Beijing Institute of Technology
InventorsSHUJUN YE, KOICHI NISHIOKA
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The present disclosure relates to a fixed layer of a magnetic tunnel junction, a magnetic storage chip, and a method for manufacturing the magnetic tunnel junction, and particularly provides a new MTJ device structure and a method for manufacturing the same. Specifically, fixed layers are prepared on both sides of a free layer of a conventional MTJ, i.e., forming a double-fixed-layer structure. The double-fixed-layer MTJ is made of ferromagnetic materials with high spin polarization rates that are subject to certain magnetization treatment, have a certain difference in coercivity strength and have opposite spin directions. The structure can realize for the first time that information writing energy can be reduced when spins of the fixed layers and the free layer of the MTJ change from parallel state to antiparallel state and from antiparallel state to parallel state.
A magnetic tunnel junction for a magnetic memory chip, comprising:
Dependencies are inferred from the claim text.