Infrared full color image sensor

An infrared (IR) full color image sensor, comprising:

• a CMOS image sensor;
• an isolation component, disposed on the CMOS image sensor to define a plurality of conversion areas;
• and
• a red light conversion unit, a green light conversion unit and a blue light conversion unit, respectively disposed in the plurality of different conversion areas, wherein
• each of the red light conversion unit, the green light conversion unit, and the blue light conversion unit comprises:
• an anode layer and a cathode layer, wherein the cathode layer is in direct contact with the CMOS image sensor;
• an IR filter, disposed on the anode layer;
• a hole transport layer, disposed between the cathode layer and the anode layer;
• a first electron transport layer, disposed between the anode layer and the hole transport layer;
• a second electron transport layer, disposed between the cathode layer and the hole transport layer;
• a light-absorbing quantum dot layer, disposed between the first electron transport layer and the hole transport layer to absorb an infrared light in a predetermined wavelength range that enters the conversion area through the IR filter and then generates an electron-hole pair;
• and
• a light-emitting quantum dot layer, disposed between the second electron transport layer and the hole transport layer to recombine the electron-hole pair to excite at least one of red, green, and blue visible lights to the CMOS image sensor.