Detecting device

A detecting device comprising:

• a photoelectric conversion element electrically connected to a first node;
• a first transistor including a first oxide semiconductor layer electrically connected between the first node and a second node;
• a second transistor including a second oxide semiconductor layer provided in the same layer as the first oxide semiconductor layer and connected between the second node and a reset potential line to which a constant voltage is supplied;
• and
• a first capacitance element including a first conductive layer stacked under the same layer as the first oxide semiconductor layer and electrically connected to a power supply line that supplies a power supply voltage, a third oxide semiconductor layer arranged in the same layer as the first oxide semiconductor layer and electrically connected to the second node, and a second conductive layer stacked on the third oxide semiconductor layer and electrically connected to the power supply line.

A detecting device comprising:

• a photoelectric conversion element electrically connected to a first node;
• a first transistor including a first oxide semiconductor layer electrically connected between the first node and a second node;
• a second transistor provided in the same layer as the first oxide semiconductor layer and including a second oxide semiconductor layer connected between the second node and a reset potential line to which a constant voltage is supplied;
• a first capacitance element including a first conductive layer stacked on the same layer and electrically connected to a power supply line to which a power supply voltage is supplied, and a second conductive layer stacked on the first conductive layer and electrically connected to the second node;
• and
• a second capacitance element including a third conductive layer arranged on the second conductive layer and electrically connected to a reference potential line to which a reference voltage is supplied.