Light-emitting diode and light-emitting device

Abstract

A light-emitting diode includes an epitaxial stack, a dielectric layer, a metal reflective layer, a substrate, and an oxide protective layer. The epitaxial stack sequentially includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer along a direction from an upper surface to a lower surface. The dielectric layer is disposed on the lower surface of the epitaxial stack and has multiple through-holes. The metal reflective layer is disposed on a side of the dielectric layer facing away from the epitaxial stack and electrically connected to the epitaxial stack through the through-holes. The substrate is disposed on a side of the metal reflective layer facing away from the epitaxial stack. The oxide protective layer covers a sidewall of the metal reflective layer. Thus, metal migration of the metal reflective layer can be effectively prevented, leakage current can be avoided, and the product quality can be improved.

Dependencies are inferred from the claim text.