Methods and devices for light emitting device with composite contact

A method of manufacturing a light emitting diode (LED) device comprising:

• forming a semiconductor structure on a substrate, the semiconductor structure comprising an n-type layer, a p-type layer, and an active layer between the n-type layer and the p-type layer, the semiconductor structure comprising a top surface, a bottom surface, and side walls connecting the top surface and the bottom surface;
• depositing a transparent conductive layer on at least one of the side walls;
• depositing a dielectric layer on the transparent conductive layer;
• depositing a thin contact layer on the transparent conductive layer and the dielectric layer, the thin contact layer in electrical contact with the transparent conductive layer;
• depositing a metal trench in electrical contact with the thin contact layer and the transparent conductive layer;
• and
• forming a p-type contact on the bottom surface of the semiconductor structure.