Light emitting diode and light emitting device

Abstract

Provided are a light emitting diode (LED) and a light emitting device. The LED includes a first semiconductor layer, an active layer and a second semiconductor layer, which are sequentially stacked in that order from bottom to top. The active layer includes AlmGa1-mN barrier layers and AlnGa1-nN well layer, which are alternately stacked periodically, and one AlmGa1-mN barrier layer and one AlnGa1-nN well layer is taken as one period to thereby form multiple periods. In at least one period of the multiple periods, a ratio of a thickness of the AlnGa1-nN well layer to a thickness of the AlmGa1-mN barrier layer is in a range of 1:3 to 1:8. By adjusting a thickness ratio of the AlnGa1-nN well layer to the AlmGa1-mN barrier layer, a combination efficiency of electrons and holes in a quantum well can be effectively improved, thus improving a luminous efficiency of the LED.

Dependencies are inferred from the claim text.