US 2026/0090143 A1Published application

Pixel structure

AssigneeAUO Corporation

InventorsYu-Hsin Huang, Chia-An Lee, Yi-Hong Chen, YinYu Chen, Wen-Wei Yang, Kuan-Heng Lin

Life of this patent

Estimating the term…

Loading patent…

Abstract

A light-emitting element includes a first type semiconductor layer, a second type semiconductor layer, an active layer, an intrinsic semiconductor layer, a first electrode and a second electrode. The second type semiconductor layer is disposed opposite to the first type semiconductor layer. The active layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The intrinsic semiconductor layer has multiple microstructures. The second type semiconductor layer is disposed between the intrinsic semiconductor layer and the active layer. The first electrode and the second electrode are respectively disposed on opposite sides of the active layer. The second electrode is disposed in a through hole of the intrinsic semiconductor layer and a recess of the second type semiconductor layer.

Claims10

Dependent claims

A light-emitting element comprising:

a first type semiconductor layer;
a second type semiconductor layer, disposed opposite to the first type semiconductor layer;
an active layer, disposed between the first type semiconductor layer and the second type semiconductor layer;
an intrinsic semiconductor layer having microstructures, wherein the second type semiconductor layer is disposed between the intrinsic semiconductor layer and the active layer;
a first electrode and a second electrode respectively disposed on opposite sides of the active layer and electrically connected to the first type semiconductor layer and the second type semiconductor layer respectively;
wherein the intrinsic semiconductor layer has a through hole, the second type semiconductor layer has a recess, the through hole of the intrinsic semiconductor layer is connected with the recess of the second type semiconductor layer, and the second electrode is disposed in the through hole of the intrinsic semiconductor layer and the recess of the second type semiconductor layer.

3 more elements

Dependencies are inferred from the claim text.