Semiconductor device and method for manufacturing semiconductor device

A semiconductor device comprising:

• a first insulating layer comprising hydrogen;
• a first conductive layer over the first insulating layer;
• a second insulating layer over the first conductive layer;
• and
• a metal oxide layer,
• wherein a first opening reaching the first conductive layer is provided in the second insulating layer,
• wherein the metal oxide layer comprises a region positioned in the first opening and being in contact with the first conductive layer,
• wherein the second insulating layer comprises a first layer and a second layer over the first layer,
• wherein the first layer comprises a region in contact with the first insulating layer, and
• wherein the first insulating layer comprises a region with a hydrogen content higher than or equal to a hydrogen content of the first layer.

A method for manufacturing a semiconductor device,

• the method comprising the steps of:
• forming a first insulating layer comprising hydrogen;
• forming a first conductive layer over the first insulating layer;
• forming a second insulating layer over the first conductive layer;
• forming a second conductive layer over the second insulating layer;
• processing the second conductive layer to form a first opening, the first opening comprising a region overlapping with the first conductive layer;
• processing the second insulating layer to form a second opening reaching the first conductive layer, the second opening comprising a region overlapping with the first opening;
• forming a metal oxide layer comprising a region positioned in the second opening and in contact with the first conductive layer and a region in contact with the second conductive layer;
• forming a third insulating layer over the metal oxide layer, the third insulating layer comprising a region positioned in the second opening;
• and
• forming a third conductive layer, the third conductive layer comprising a region facing the metal oxide layer with the third insulating layer therebetween.