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US 2026/0090100 A1Published application
Integrated gate-all-around (gaa)/finfet transistor devices
AssigneeIntel Corporation
InventorsChen-Guan Lee, Hsu-Yu Chang, Rahul Ramaswamy, Chia-Hong Jan
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Abstract
In embodiments of the present disclosure, an integrated transistor device includes a gate-all-around (GAA) transistor and a FinFET transistor device on the same substrate. The FinFET transistor includes a dielectric region between the channel of the FinFET transistor and the substrate.
Claims20
An apparatus comprising:
- a substrate;
- a first transistor on the substrate, the first transistor comprising:
- a plurality of first channel regions;
- and
- a first gate region surrounding each of the first channel regions;
- a second transistor on the substrate, the second transistor comprising:
- a second channel region;
- a second gate region around at least three sides of the second channel region;
- and
- a dielectric region comprising Oxygen between the second gate region and the second channel region and further between the second channel region and the substrate.
7 more elements
An integrated circuit device comprising:
- a semiconductor layer;
- a first transistor on the semiconductor layer, the first transistor comprising:
- a plurality of semiconductor channel regions above the semiconductor layer, the channel regions connecting a source region of the first transistor and a drain region of the first transistor;
- and
- a conductive gate region surrounding each of the channel regions;
- and
- a second transistor on the semiconductor layer, the second transistor comprising:
- a fin extending from the semiconductor layer, the fin comprising a channel region;
- and
- a conductive gate region around the fin;
- wherein the fin comprises a dielectric between the channel region and the semiconductor layer.
8 more elements
An integrated circuit device comprising:
- a semiconductor substrate;
- a gate-all-around (GAA) transistor on the semiconductor substrate;
- and
- a FinFET transistor on the semiconductor substrate, the FinFET comprising a dielectric region between a gate region and a channel region of the FinFET transistor and further between the channel region and the substrate.
1 more element
Dependencies are inferred from the claim text.