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US 2026/0090071 A1Published application
Semiconductor device with stress liner and backside contact
AssigneeInternational Business Machines Corporation
InventorsRuilong Xie, Kisik Choi, Chen Zhang, Jingyun Zhang
Life of this patent
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Abstract
A semiconductor device includes a frontside contact over a first source/drain region, a placeholder below the first source/drain region, a backside contact below a second source/drain region, a gate region between the first source/drain region and the second source/drain region, a frontside stress liner wrapping around the gate region, and a backside stress liner wrapping around the placeholder.
Claims20
A semiconductor device, comprising:
- a frontside contact over a first source/drain region;
- a placeholder below the first source/drain region;
- a backside contact below a second source/drain region;
- a gate region between the first source/drain region and the second source/drain region;
- a frontside stress liner wrapping around the gate region;
- and
- a backside stress liner wrapping around the placeholder.
4 more elements
A method of fabricating a semiconductor device, the method comprising:
- forming a first source/drain region;
- forming a frontside contact over the first source/drain region;
- forming a placeholder below the first source/drain region;
- forming a second source/drain region;
- forming a backside contact below the second source/drain region;
- forming a gate region between the first source/drain region and the second source/drain region;
- forming a frontside stress liner to wrap around the gate region;
- and
- forming a backside stress liner to wrap around the placeholder.
6 more elements
A semiconductor device, comprising:
- a first source/drain region;
- a second source/drain region;
- a gate region between the first source/drain region and the second source/drain region;
- a frontside stress liner wrapping around the gate region;
- and
- a backside stress liner below the first source/drain region and the second source/drain region.
3 more elements
Dependencies are inferred from the claim text.