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US 2026/0090048 A1Published application
Semiconductor device and method for manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsNaoki YOSHIOKA, Daisuke TSUNAMI
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Abstract
A SiC substrate (10) is doped with vanadium. A high electron mobility transistor (20) is provided on the SiC substrate (10). The SiC substrate (10) includes a first substrate (1) and a second substrate (2) provided on the first substrate (1). Vanadium concentration of the first substrate (1) is 1×1018 cm−3 or more. Vanadium concentration of the second substrate (2) at an interface between the second substrate (2) and the high electron mobility transistor (20) is 1×1017 cm−3 or less.
Claims7
A semiconductor device comprising:
- a SiC substrate doped with vanadium;
- and
- a high electron mobility transistor provided on the SiC substrate,
- wherein the SiC substrate includes a first substrate and a second substrate provided on the first substrate,
- vanadium concentration of the first substrate is 1×1018 cm−3 or more, and
- vanadium concentration of the second substrate at an interface between the second substrate and the high electron mobility transistor is 1×1017 cm−3 or less.
3 more elements
Dependencies are inferred from the claim text.