Semiconductor structure and manufacturing method thereof

A semiconductor structure, comprising:

• a silicon carbide substrate, having a cell region, a junction terminal region and a street line from the inside to the outside;
• an epitaxial layer, covering the silicon carbide substrate;
• at least one active device, disposed in the epitaxial layer of the cell region;
• a plurality of guard rings disposed in the epitaxial layer of the junction terminal region for surrounding the cell region;
• and
• a passivation layer, covering the epitaxial layer of the junction terminal region and the street line,
• wherein the passivation layer substantially prevents the street line from arcing generated during a high-voltage test.

A method of manufacturing a semiconductor structure, comprising:

• providing a silicon carbide substrate, having a cell region, a junction terminal region and a street line from the inside to the outside;
• providing an epitaxial layer, covering the silicon carbide substrate;
• providing a plurality of guard rings disposed in the epitaxial layer of the junction terminal region for surrounding the cell region;
• and
• providing a passivation layer, covering the epitaxial layer of the junction terminal region and the street line,
• wherein the passivation layer substantially prevents the street line from arcing generated during a high-voltage test.