Method for forming a source/drain contact

A method for forming a source/drain contact, the method comprising:

• providing at least one fin on top of a substrate, the at least one fin including at least a first set of channel layers, the at least one fin being arranged between a first and second shallow trench isolation (STI) region extending into the substrate;
• from a frontside of the substrate:
• forming a cavity in the substrate proximate to the at least one fin,
• forming a sacrificial plug in the cavity, and
• forming a source/drain region on top of the sacrificial plug, and in contact with the first set of channel layers of the at least one fin;
• and
• removing a first region of the substrate, the first region of the substrate being a region between the first and second STI region and around the sacrificial plug,
• forming a dielectric material between the first and second STI region and around the sacrificial plug, and
• replacing the sacrificial plug with a metal such that the metal is in electrical contact with the source/drain region,
• wherein a bottom level of the cavity is substantially equal to a bottom level of the first and second STI region.