Semiconductor device

A semiconductor device, comprising:

• a substrate structure comprising a semiconductor layer;
• a source structure over the semiconductor layer of the substrate structure;
• a drain structure over the semiconductor layer and arranged along a first direction with the source structure, wherein the drain structure comprises:
• a drain metal;
• a plurality of first island structures, wherein each of the first island structures comprises a p-type semiconductor layer and at least one first drain via over the p-type semiconductor layer, and the at least one first drain via is in contact with the p-type semiconductor layer and connected to the drain metal;
• and
• a plurality of second island structures, wherein each of the second island structures comprises a metal electrode and at least one second drain via over the metal electrode, and the at least one second drain via is in contact with the metal electrode and connected to the drain metal,
• wherein the first island structures and the second island structures are arranged alternately and spaced apart along a second direction, and the second direction is substantially perpendicular to the first direction,
• wherein in a conducting state, a potential of at least one contact surface between the at least one first drain via and the p-type semiconductor layer of each of the first island structures is different from a potential of the metal electrode of each of the second island structures;
• and
• a gate structure over the semiconductor layer and between the source structure and the drain structure.