Semiconductor device and manufacturing method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsMin-Hung LEE, Cheng-Hong LIU
Life of this patent
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Abstract
A method for manufacturing a semiconductor device is provided. The method includes patterning a semiconductor layer into a channel layer, wherein the semiconductor layer is over a dielectric layer on a substrate; removing a first portion of the dielectric layer below the channel layer to turn channel layer, such that have a first end of the channel layer is higher than a second end of the channel layer; and forming a gate structure over the channel layer.
Claims20
A method for manufacturing a semiconductor device, comprising:
- patterning a semiconductor layer into a channel layer, wherein the semiconductor layer is over a dielectric layer on a substrate;
- removing a first portion of the dielectric layer below the channel layer to turn channel layer, such that a first end of the channel layer is higher than a second end of the channel layer;
- and
- forming a gate structure over the channel layer.
A method for manufacturing a semiconductor device, comprising:
- forming a stack over a dielectric layer, wherein the stack comprises a first channel layer, a second channel layer, and a sacrificial layer between the first and second channel layers, wherein the first and second channel layers are level with each other;
- etching the dielectric layer to turn the stack, such that the first channel layer is higher than the second channel layer;
- and
- replacing the sacrificial layer with a gate structure.
A semiconductor device, comprising:
- a substrate;
- at least one channel layer over the substrate, wherein the at least one channel layer has a surface with (100) surface orientation, and the surface of the at least one channel layer is non-parallel to a top surface of the substrate;
- and
- a gate structure surrounding the at least one channel layer and in contact with the surface of the at least one channel layer.
Dependencies are inferred from the claim text.