Semiconductor device

A semiconductor device comprising:

• a transistor region;
• a diode region;
• and
• a termination region surrounding the transistor region and the diode region, the diode region being provided between the termination region and the transistor region, wherein
• the transistor region includes:
• a semiconductor layer having a first face and a second face opposed to the first face;
• a first semiconductor region of a first conductivity type, the first semiconductor region being provided in the semiconductor layer;
• a second semiconductor region of a second conductivity type, the second semiconductor region being provided in the semiconductor layer and between the first semiconductor region and the first face;
• a third semiconductor region of a first conductivity type, the third semiconductor region being provided in the semiconductor layer and between the second semiconductor region and the first face;
• a fourth semiconductor region of a second conductivity type, the fourth semiconductor region being provided in the semiconductor layer and between the third semiconductor region and the first face;
• a plurality of first trenches provided on a side of the first face in the semiconductor layer, the first trenches extending in a first direction parallel to the first face, the first trenches being disposed repeatedly in a second direction perpendicular to the first direction and parallel to the first face, the first trenches being in contact with the second semiconductor region, the third semiconductor region, and the fourth semiconductor region;
• a first conductive layer provided in each of the first trenches;
• a first insulating film provided between the first conductive layer and the semiconductor layer;
• a first electrode provided on a side of the first face with respect to the semiconductor layer, the first electrode being in contact with the fourth semiconductor region;
• and
• a second electrode provided on a side of the second face with respect to the semiconductor layer, the second electrode being in contact with the first semiconductor region,
• the diode region includes:
• the semiconductor layer;
• the second semiconductor region;
• a fifth semiconductor region of a second conductivity type, the fifth semiconductor region being provided in the semiconductor layer, the fifth semiconductor region being provided between the second semiconductor region and the second face, the fifth semiconductor region having a second conductivity type impurity concentration higher than a second conductivity type impurity concentration of the second semiconductor region;
• a sixth semiconductor region of a first conductivity type provided in the semiconductor layer, the sixth semiconductor region being provided between the second semiconductor region and the first face;
• a plurality of second trenches provided on a side of the first face in the semiconductor layer, the second trenches extending in the first direction, the second trenches being disposed repeatedly in the second direction, the second trenches being in contact with the second semiconductor region and the sixth semiconductor region;
• a second conductive layer provided in each of the second trenches;
• a second insulating film provided between the second conductive layer and the semiconductor layer;
• the first electrode electrically connected to the sixth semiconductor region;
• and
• the second electrode in contact with the fifth semiconductor region, and
• the termination region includes:
• the semiconductor layer;
• the second semiconductor region;
• a seventh semiconductor region of a first conductivity type, the seventh semiconductor region being provided in the semiconductor layer, the seventh semiconductor region being provided between the second semiconductor region and the first face, the seventh semiconductor region being electrically connected to the first electrode;
• at least one third trench provided on a side of the first face in the semiconductor layer, the at least one third trench being provided between the seventh semiconductor region and the first face, the at least one third trench extending in the first direction, the at least one third trench being in contact with the seventh semiconductor region;
• a third conductive layer provided in each of the at least one third trench;
• a third insulating film provided between the third conductive layer and the semiconductor layer;
• the first electrode;
• the second electrode;
• a first electrode pad provided on a side of the first face with respect to the semiconductor layer, the first electrode pad being electrically connected to the first conductive layer provided in each of at least a part of the plurality of first trenches;
• and
• a second electrode pad provided on a side of the first face with respect to the semiconductor layer, the second electrode pad being electrically connected to the second conductive layer provided in a second trench closest to the at least one third trench among the plurality of second trenches.