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US 2026/0089989 A1Published application
High voltage aluminum nitride diodes with low ideality factor
OwnerDinusha Herath Mudiyanselage, Houqiang Fu +1inventors
InventorsDinusha Herath Mudiyanselage, Houqiang Fu, Dawei Wang
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Abstract
A lateral Schottky barrier diode includes a single crystal AlN substrate, an unintentionally doped AlN layer, a silicon-doped AlN layer, an unintentionally doped GaN layer, a passivation layer, a plurality of ohmic contacts, and a Schottky contact.
Claims21
A lateral Schottky barrier diode comprising:
- a single crystal AlN substrate;
- an unintentionally doped AlN layer;
- a silicon-doped AlN layer;
- an unintentionally doped GaN layer;
- a passivation layer;
- a plurality of ohmic contacts;
- and
- a Schottky contact.
5 more elements
Dependencies are inferred from the claim text.