Three-dimensional flash memory using ferroelectric layer on basis of back gate structure

A three-dimensional flash memory comprising:

• a plurality of word lines extending in a horizontal direction on a substrate and sequentially stacked;
• and
• a plurality of strings extending in one direction on the substrate through the plurality of word lines, each of the plurality of strings including:
• a channel layer extending in the one direction,
• a ferroelectric layer extending in the one direction to surround the channel layer,
• a back gate extending in the one direction, and
• an insulating film extending in the one direction to surround the back gate being arranged inside the channel layer,
• wherein the channel layer and the ferroelectric layer constituting a plurality of memory cells corresponding to the plurality of word lines,
• wherein the ferroelectric layer is used as data storage by changing and maintaining states of charges while being formed of a ferroelectric material,
• wherein, in a read operation related to a target memory cell among the plurality of memory cells included in a selected string among the plurality of strings, a word line corresponding to the target memory cell is configured to have a read voltage applied, and a back

A three-dimensional flash memory comprising:

• a plurality of word lines extending in a horizontal direction on a substrate and sequentially stacked;
• and
• a plurality of strings extending in one direction on the substrate through the plurality of word lines, each of the plurality of strings including:
• a channel layer extending in the one direction,
• a ferroelectric layer extending in the one direction to surround the channel layer,
• a back gate extending in the one direction, and
• an insulating film extending in the one direction to surround the back gate being arranged inside the channel layer,
• wherein the channel layer and the ferroelectric layer constituting a plurality of memory cells corresponding to the plurality of word lines,
• wherein the ferroelectric layer is used as data storage by changing and maintaining states of charges while being formed of a ferroelectric material, and
• wherein, in a read operation related to a target memory cell among the plurality of memory cells included in a selected string among the plurality of strings, a word line corresponding to the target memory cell is configured to have a first read voltage applied, and a back gate included in the selected string is configured to have a second read voltage applied.