Semiconductor structure and method for forming the same

A semiconductor structure comprising:

• a plurality of gate layers and a plurality of insulating layers alternately stacked in a first direction, wherein each gate layer and each insulating layer extend in a second direction different from the first direction;
• a source electrode and a drain electrode extending in the first direction;
• a ferroelectric layer between the source electrode and the plurality of gate layers, and between the drain electrode and the plurality of gate layers;
• a channel structure between the ferroelectric layer and the source electrode, and between the ferroelectric layer and the drain electrode, wherein the channel structure comprises:
• a first channel layer comprising a first donor carrier concentration;
• and
• a second channel layer comprising a second donor carrier concentration;
• a first multilayered structure surrounding the source electrode and separating the source electrode from the channel structure;
• and
• a second multilayered structure surrounding the drain electrode and separating the drain electrode from the channel structure,
• wherein the first donor carrier concentration of the first channel layer is different from the second donor carrier concentration of the second channel layer.

A method for forming a semiconductor structure, comprising:

• forming a gate electrode over a substrate;
• forming a ferroelectric layer over the gate structure;
• forming a multilayered channel structure over the ferroelectric layer;
• forming a first multilayered structure and a second multilayered structure adjacent to the multilayered channel structure;
• and
• forming a source electrode and a drain electrode adjacent to the multilayered channel structure.