Semiconductor device and electronic system including semiconductor device

A semiconductor device comprising:

• a substrate including an N-doped region and a plurality of first semiconductor patterns in the N-doped region;
• a gate stack structure including a plurality of interlayer insulating layers and a plurality of gate electrodes that are alternately stacked on the substrate;
• and
• a channel structure that extends into the gate stack structure and overlaps the first semiconductor pattern in a direction perpendicular to the substrate,
• wherein the first semiconductor pattern includes a P-doped region and an undoped region, and
• wherein the first semiconductor pattern includes a blocking pattern between the P-doped region and the N-doped region.

An electronic system comprising:

• a main substrate;
• a semiconductor device on the main substrate;
• and
• a controller on the main substrate and electrically connected to the semiconductor device,
• wherein the semiconductor device comprises:
• a gate stack structure including a plurality of interlayer insulating layers and a plurality of gate electrodes that are alternately stacked,
• a channel structure that extends into the gate stack structure,
• a plurality of first semiconductor patterns at one end of the channel structure, and each of the plurality of first semiconductor patterns including a P-doped region and an undoped region,
• an N-doped region between adjacent ones of the first semiconductor patterns,
• a blocking pattern between the P-doped region and the N-doped region, and
• a common source electrode on respective surfaces of the plurality of first semiconductor patterns and the N-doped region.