Semiconductor device and method for fabricating the semiconductor device

Abstract

The technology relates to a semiconductor device and a method for manufacturing the semiconductor device. According to the technology, a method for manufacturing a semiconductor device may comprise forming a gapfill target structure on a semiconductor substrate, the gapfill target structure including a horizontal recess parallel with the semiconductor substrate and having a first surface and a vertical slit extending from the horizontal recess and having a second surface perpendicular to the semiconductor substrate, removing a native oxide from the first surface to form a pre-cleaned first surface, forming, in-situ, a first semiconductor material on the pre-cleaned first surface and forming a second semiconductor material on the first semiconductor material.

Dependencies are inferred from the claim text.