Bonded assemblies with test pads connected to through oxide via structures and methods for forming the same
AssigneeSanDisk Technologies LLC
InventorsYohei MASAMORI, Mitsuteru MUSHIGA
Life of this patent
Estimating the term…
Abstract
A bonded assembly of a memory die and logic control die includes a through-oxide peripheral connection via structure embedded within memory-die inorganic dielectric layers, and electrically connected to at least one of the word lines, to a respective first one of first memory-die copper bonding pads, and to a test pad structure. A lateral interconnect may be used to electrically connect the through-oxide peripheral connection via structure to the test pad structure.
Claims20
A semiconductor structure comprising a bonded assembly, wherein the bonded assembly comprises:
- a first memory die comprising:
- a first alternating stack of first insulating layers and first electrically conductive layers;
- first memory stack structures vertically extending through the first alternating stack;
- a through-oxide peripheral connection via structure embedded within first memory-die inorganic dielectric layers, and electrically connected to at least one of the electrically conductive layers and to a respective first one of first memory-die copper bonding pads;
- a test pad structure electrically connected to the through-oxide peripheral connection via structure;
- and
- first additional memory-die copper bonding pads embedded within first additional memory-die inorganic dielectric layers;
- and
- a first memory-controller die bonded to the first memory die, wherein the first memory-controller die comprises:
- a memory-controller die substrate;
- a first memory controller circuit configured to control operation of the first memory stack structures;
- first controller-die copper bonding pads embedded within first controller-die inorganic dielectric layers and bonded to the first additional memory-die copper bonding pads;
- and
- a through-silicon via embedded in the memory-controller die substrate and electrically connected to the through-oxide peripheral connection via structure.
A method of forming a bonded assembly, comprising:
- providing a first memory die comprising:
- a first alternating stack of first insulating layers and first electrically conductive layers;
- first memory stack structures vertically extending through the first alternating stack;
- and
- first additional memory-die copper bonding pads embedded within first additional memory-die inorganic dielectric layers;
- providing a first memory-controller die comprising:
- a memory-controller die substrate;
- a first memory controller circuit configured to control operation of the first memory stack structures;
- first controller-die copper bonding pads embedded within first controller-die inorganic dielectric layers;
- and
- a through-silicon via embedded in the memory-controller die substrate;
- bonding the first additional memory-die copper bonding pads to the first controller-die copper bonding pads;
- forming a test pad structure;
- and
- contacting a probe to the pad structure to electrically test the first memory die,
- wherein a through-oxide peripheral connection via structure is embedded within first memory-die inorganic dielectric layers, and electrically connected to at least one of the electrically conductive layers, to the test pad structure, and to a respective first one of first memory-die copper bonding pads of the first memory die.
Dependencies are inferred from the claim text.