US 2026/0089944 A1 · THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MULTI-SURFACE SCHOTTKY SOURCE CONTACT AND METHODS FOR FORMING THE SAME

Abstract

A memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and a memory film. The vertical semiconductor channel includes an end portion that protrudes below a horizontal plane including a bottommost surface of the alternating stack. An annular semiconductor spacer contacts a cylindrical surface segment of an outer sidewall of the vertical semiconductor channel that protrudes below the horizontal plane and laterally surrounds the vertical semiconductor channel. A metallic source layer contacts an outer sidewall of the annular semiconductor spacer and surface segments of the

Claims20

Dependent claims

A memory device, comprising:

an alternating stack of insulating layers and electrically conductive layers;
a memory opening vertically extending through the alternating stack;
a memory opening fill structure located in the memory opening and comprising a vertical semiconductor channel and a memory film, wherein the vertical semiconductor channel comprises an end portion that protrudes below a horizontal plane including a bottommost surface of the alternating stack;
an annular semiconductor spacer contacting a cylindrical surface segment of an outer sidewall of the vertical semiconductor channel that protrudes below the horizontal plane and laterally surrounding the vertical semiconductor channel;
and
a metallic source layer contacting an outer sidewall of the annular semiconductor spacer and surface segments of the bottommost surface of the alternating stack.

3 more elements

A method of forming a memory device, comprising:

forming an alternating stack of insulating layers and spacer material layers over a carrier substrate, wherein the spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers;
forming a memory opening through the alternating stack;
forming a memory opening fill structure in the memory opening, wherein the memory opening fill structure comprises a memory film and a vertical semiconductor channel;
removing the carrier substrate;
removing an end portion of the memory film to physically expose an end portion of the vertical semiconductor channel;
forming an annular semiconductor spacer around the end portion of the vertical semiconductor channel;
and
forming a metallic source layer on an outer sidewall of the annular semiconductor spacer.

5 more elements

Dependencies are inferred from the claim text.

Three-dimensional memory device containing multi-surface schottky source contact and methods for forming the same

Life of this patent

Three-dimensional memory device containing multi-surface schottky source contact and methods for forming the same

Life of this patent

Abstract

Claims20