Semiconductor device having a perpendicular discrete contact node coupled to the end of a first impurity horizontal layer

A method for fabricating a semiconductor device, comprising:

• forming a stack body including a semiconductor layer between dielectric layers, and sacrificial layers between the semiconductor layer and the dielectric layers;
• forming an opening by etching the stack body;
• recessing the semiconductor layer and the sacrificial layers laterally from the opening in order to form a wide opening for defining a recessed semiconductor layer and a recessed sacrificial layer;
• forming a discrete contact node which is doped with an impurity over the recessed semiconductor layer and the recessed sacrificial layers;
• and
• forming a doped region in the recessed semiconductor layer by diffusing the impurity from the discrete contact node.