Integrated circuit (ic) device

An integrated circuit device, comprising:

• a plurality of conductive regions on a substrate;
• a plurality of capacitors on the plurality of conductive regions, the plurality of capacitors including a plurality of lower electrodes, an upper electrode, and a dielectric layer between the plurality of lower electrodes and the upper electrode, the upper electrode including a metal-containing conductive pattern on the dielectric layer and a non-metal conductive pattern on the metal-containing conductive pattern;
• a conductive damascene pattern on the non-metal conductive pattern of the upper electrode, the conductive damascene pattern having a topmost surface that is coplanar with a top surface of the non-metal conductive pattern;
• and
• at least one conductive contact plug on the upper electrode, the at least one conductive contact plug contacting the non-metal conductive pattern and being spaced apart from the conductive damascene pattern.

An integrated circuit device, comprising:

• a plurality of lower electrodes disposed on a substrate;
• a dielectric layer that covers respective surfaces of the plurality of lower electrodes;
• an upper electrode disposed on the dielectric layer and that covers the plurality of lower electrodes, the upper electrode including a conductive metal nitride layer on the dielectric layer and a doped SiGe pattern on the conductive metal nitride layer;
• and
• a conductive damascene pattern buried in the doped SiGe pattern of the upper electrode,
• wherein the conductive metal nitride layer fills spaces between the plurality of lower electrodes on the dielectric layer and covers respective top surfaces of the plurality of lower electrodes;
• wherein the doped SiGe pattern includes:
• a lower SiGe conductive portion that includes a first top surface at a first height from a bottom surface of the doped SiGe pattern and that faces the plurality of lower electrodes with the conductive metal nitride layer therebetween;
• and
• an upper SiGe conductive portion that protrudes from the first top surface of the lower SiGe conductive portion in a direction away from the substrate, the upper SiGe conductive portion including a second top surface at a second height from the bottom surface of the doped SiGe pattern that is higher than the first height, and
• wherein the conductive damascene pattern includes a metal pattern that is disposed on the first top surface of the lower SiGe conductive portion, and a topmost surface that is coplanar with the second top surface of the upper SiGe conductive portion.