Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorSeung Hwan KIM
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor device includes: forming a stack body by alternately stacking a plurality of semiconductor layers and a plurality of sacrificial semiconductor layers over a lower structure; forming an opening by etching the stack body; forming a plurality of active layers and a plurality of lateral recesses by etching the semiconductor layers and the sacrificial semiconductor layers through the opening; forming sacrificial dielectric layers partially filling the lateral recesses and contacting the active layers; and replacing the sacrificial dielectric layers with word lines.
Claims12
A semiconductor device, comprising:
- a lower structure;
- cell isolation dielectric layers that are vertically stacked over the lower structure and parallel to the lower structure;
- monocrystalline silicon active layers that are disposed between the cell isolation dielectric layers and laterally oriented to be parallel to the lower structure;
- word lines laterally oriented to cross each of the monocrystalline silicon active layers between the cell isolation dielectric layers;
- a bit line commonly coupled to one side of the monocrystalline silicon active layers and extending in a direction perpendicular to the lower structure;
- and
- capacitors coupled to another side of the monocrystalline silicon active layers.
Dependencies are inferred from the claim text.