Circuit structure and manufacturing method thereof
AssigneeSiliconware Precision Industries Co., Ltd.
InventorsChung-Chih YEN, Chun-Chu LAI
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Abstract
A circuit structure and a manufacturing method thereof are provided, in which a seed layer composed of a plurality of discontinuous metal blocks is formed on a dielectric layer, and a circuit layer is formed on the seed layer by electroplating. By roughening the overall surface of the plurality of discontinuous metal blocks and creating a relatively concave-convex structure, the bonding effect between the seed layer and the circuit layer formed thereon is strengthened, thereby preventing the problem of delamination and improving the process yield.
Claims23
A circuit structure, comprising:
- a dielectric layer;
- a seed layer formed on the dielectric layer, and composed of a plurality of discontinuous metal blocks;
- and
- a circuit layer formed on the seed layer.
A method of manufacturing a circuit structure, comprising:
- providing a dielectric layer;
- forming a seed layer on the dielectric layer, wherein the seed layer is composed of a plurality of discontinuous metal blocks;
- and
- forming a circuit layer on the seed layer.
Dependencies are inferred from the claim text.